| 摘要 |
PURPOSE:To obtain a substrate for polishing a Ga-As wafer by using an Fe alloy contg. a specified amount of Ni having the same coefft. of thermal expansion as Ga-As so as to prevent deterioration in the flatness of the wafer after polishing. CONSTITUTION:A substrate for polishing a Ga-As wafer is made of an Fe alloy contg. 42-50wt% Ni having the same coefft. of thermal expansion as Ga-As. The coefft. is 8X10<-6>/ deg.C. A Ga-As wafer is adhered to the substrate with wax or the like, and mirror polishing is carried out. |
