| 摘要 |
PURPOSE:To form efficiently a high hardness boron nitride film of high quality on a substrate in a reaction chamber by introducing a gas contg. N and a gas contg. B into the chamber and by generating plasma by electron cyclotron resonance. CONSTITUTION:A coil 2 for an electromagnet is placed around the reaction chamber 1 of an electron cyclotron resonance type discharge apparatus. A magnetic field is applied to the inside of the chamber 1, and microwaves are introduced into the chamber 1 through a waveguide 3. A gas contg. N such as N2 or NH3 and a gas contg. B such as B2H6 or BCl3 are then introduced into the chamber 1 through an introducing pipe 4. Electron cyclotron resonance takes place, electrons collide with the introduced gases to generate plasma by discharge, and a high hardness boron nitride film is formed on a substrate 5 by vapor phase growth. |
