| 摘要 |
PURPOSE:To obtain a large quantity of vapor-deposited samples of a homogeneous film by heating a vapor deposition source with high-frequency excitation, and providing a device for regulating the melting position of the vapor deposition source to the outside of a vacuum vessel in a titled device of a high- melting point material. CONSTITUTION:An Si rod 5 as a vapor deposition source is inserted into a cooling pipe, and the rod can be inserted or taken out from the outside of a vacuum vessel 1 with a material supporting rod 15 and a bellows 12. In vapor deposition, the inside of the vessel 1 is evacuated, and the end 6 of the rod 5 whose one end is inserted into a coil 4 excited by a high-frequency power source 3 is heated by the high frequency. And an Si molecular beam emitted from the part which is made flat and semispheric by the surface tension is taken out in the form of a beam 8 from the hole of a cover 7 made of molten quartz, and irradiated on a substrate 2 in the vessel 1 to grow a semiconductor thin film thereon. The quantity of said molecular beam is monitored by a monitor 9, and the position of the rod 5 is controlled by a driving mechanism 11 through a feedback mechanism 10 to keep the intensity of the molecular beam constant. |
