| 摘要 |
PURPOSE:To give high sensitivity and high resolving power to a resist material and to improve its plasma resistance by coating using a polymer contg. specified polymn. unit as a resist material, exposing selectively to electron beam, and developing with a polar solvent. CONSTITUTION:A polymer contg. polymn. unit expressed by the formula (wherein R is C, H, O, halogen, 4-15C alkyl, or a group bonding to COOH with a tert. C atom; X is an electron attracting group such as hologen. lower alkyl, NO2, CN, etc.; C...C means that two C atoms are directly or indirectly bonded) is coated as a resist meaterial, and is exposed selectively by electron beam, and is developed with a polar solvent. By this process, the ester bond is split to form an acid in the primary chain and the polarity is increased. Thus, only the exposed part becomes soluble in the solvent. At the same time, a posi-type resist pattern having high sensitivity and high resolving power is obtd. by the synergistic effect due to decrease of the mol.wt. caused by the decomposition of the primary chain of the polymer. |
