| 摘要 |
PURPOSE:To equalize etching in a semiconductor manufacturing apparatus having upper and lower parallel flat electrodes for dry etching by plasma in a vacuum treatment chamber by roughing the surface of the lower electrode to increase the friction, thereby placing a wafer on the lower electrode to prevent the position of the wafer from displacing when implanting etching gas. CONSTITUTION:A gas filling port 5 is formed on the upper surface of a quartz terrace 1 which forms a vacuum treatment chamber, and a gas exhaust port 6 is formed on the lower surface. Then, a flat upper electrode 2 is hung by using a support from the port 5, a flat lower electrode 3 is disposed similarly oppositely thereto, and a wafer 4 to be etched is placed thereon. In this structure, the surface of the electrode 3 is not smooth, but roughed, thereby avoiding the displacement of the wafer 4 when dry etching gas is sprayed to the wafer 4. Thus, etching is equalized. |
