| 摘要 |
PURPOSE:To concentrate a plasma on a substrate to enhance the density of an atomic film and to accelerate the film forming velocity by opposing a cylindrical conductive substrate and an electrode in a reaction chamber reduced in pressure, connecting them with an AC power source, generating a plasma in stock gas presented in the chamber, and connecting the substrate through an inductance element with the power source when forming the atomic film contained in gas on the surface of the substrate, thereby concentrating the plasma on the substrate. CONSTITUTION:A stock gas filling tube 2 is connected through a valve 7 with one end of a reaction chamber 1, an exhaust tube 3 is provided through a valve 4 at the other end, and an electrode 5 and a support base 12 for placing a conductive substrate 6 are opposed in the chamber 1, and the substrate 6 is heated by a heater 13 provided on the lower surface of the base 12. The end projected from the lower surface of the base 12 is grounded through an inductance element 16, and the electrode 5 is connected with a high frequency power source 10 grounded through a matching box 11. Thus, a current directed to the side wall 8 of the current directed to the substrate 5 from the substrate 6 is reduced to concentrate the plasma to the substrate 6. |
