| 摘要 |
PURPOSE:To form a 2-layer electrode structure without problem of step coverage by selectively etching a conductor film with a resist film on the conductor film as a mask as the first electrode to form a groove, and forming the second electrode in the groove. CONSTITUTION:After forming an insulating film 2 in the prescribed thickness on a semiconductor substrate 1, a conductor film 3 made of aluminum or gold is formed on the film 2. A resist is coated on the film 3, exposed to be developed to form a resist film 4 of the prescribed pattern. With the film 4 as a mask the film 3 is selectively etched as the first electrode, and the film 2 is selectively etched to form a groove 5. Then, the second electrode 6A is formed in the groove 5 by depositing method, and a conductor film 6B is simultaneously formed on the film 4. Further, an interlayer insulating layer 7A is formed on the electrode 6A to bury the groove 5 with an insulating material by sputtering method, and an insulating film 7B is also formed on the film 6A. Then, the films 4, 6B, 7B are removed to obtain a 2-layer electrode structure. |
