| 摘要 |
PURPOSE:To obtain a semiconductor light emitting pellet having an excellent resistance to stress and able to be prevented from deterioration of light outputs as well as to ensure mechanical strength thereto, by covering at least the P-N junction of the surface of the pellet except the electrode protions with a protection film and sealing the pellet with resin through the protection film. CONSTITUTION:A wafer 14 of light emitting element provided with a P-N junction 11 and electrode 12 and 13 is diced with a diamond blade to be cut off midway across the P-N junction 11. A protection film, for example an SiO2 film 15 is then formed on the surface of the wafer 14. The SiO2 film 15 is subsequently covered with a resist film except for the regions on the electrodes 12, for example, so that the SiO2 film 15 on the electrodes 12 is dissolved and removed with ammonium fluoride. After the resist film is removed, the dicing line portions which have been cut on the midway are ut off to have a dicing width smaller than the initial dicing width, whereby seperate pellets 16 are obtained. |
