| 摘要 |
PURPOSE:To prevent the disconnection of an upper-layer wiring at a connection hole without lowering the integrity of an element in a multilayer wiring, by forming the connection holes in the same positions of first and second insulation films in separate processes, and by embedding a metal film or a metallic silicide film in said holes. CONSTITUTION:A silicon oxide film 22 is connected as a first insulation film on a silicon substrate 20 wherein an element containing diffused layers 21a and 21b are formed, first connection holes 24a and 24b are formed in the film 22 by etching the film selectively, and then W films 25a and 25b are embedded in said holes respectively by a vapor-phase epitaxial method. After first-layer Al wirings 26a and 26b are formed, an oxide silicon film 27 is connected as a second insulation film, and it is etched to form a second connection hole 29 so that this hole is positioned in superposition on the first connection hole 24b. Thereafter a W film 30 is embedded therein and a second-layer Al wiring 31 is formed. Thus, it becomes unnecessary to form a deep connection hole in a thick laminated insulation film in a part wherein the diffused layer 21b and the second- layer wiring 31 are connected, and the disconnection of the wiring can be eliminated.
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