发明名称 DYNAMIC RANDOM ACCESS MEMORY DEVICE
摘要 PURPOSE:To shorten a cycle time, and to realize a high integration degree and a low power consumption by resetting automatically the previous circuits of an NOR gate of a row decoder and a column decoder, after an operation of the respective circuits have been ended. CONSTITUTION:A row address strobe signal falls, and a buffer 3 outputs non- inversion and inversion low address signals basing on an input address signal. As a result, a selective signal of a high level is impressed to a word line WL from a NOR gate of a row decoder, and a data read out of each memory cell MC is supplied to an input/output gate through a line BL and an amplifier 4. The buffer 3 and the NOR gate of the decoder 13 are reset automatically, respectively, after the operation has been ended. Subsequently, when a column address strobe signal falls, the read-out data from the cell MC is transferred to a bus DB basing on the selective signal from a NOR gate of a column decoder 14, in the same way. A buffer 7 and the NOR gate of the decoder 14 are reset automatically, after the operation has been ended.
申请公布号 JPS60115094(A) 申请公布日期 1985.06.21
申请号 JP19830214155 申请日期 1983.11.16
申请人 FUJITSU KK 发明人 TAKEMAE YOSHIHIRO
分类号 G11C11/40;G11C11/401;G11C11/407;G11C11/4076;G11C11/408;G11C11/409;(IPC1-7):G11C11/34 主分类号 G11C11/40
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