| 摘要 |
PURPOSE:To reduce the resistance temperature coefficient of a gas detecting element in a detection gas by employing a paste having a specified sheet resistance as electrode of the semiconductor type gas detecting element. CONSTITUTION:A thick-film printing resistance paste of a sheet resistance 10kOMEGA per square is applied on a sintered body 2 of stannic oxide as electrode 3 and baked at 600 deg.C to obtain a gas detection element 1. A resistance-temperature curve of the gas detection element 1 in 1,000ppm of i-C4H10 (isobutane) is as illustrated and the resistance temperature coefficient is extremely low at 340- 460 deg.C thereby requiring no temperature control of the gas detection element as in the past. |
