发明名称 RESISTANCE-VALUE ADJUSTING METHOD OF RESISTOR ELEMENT
摘要 PURPOSE:To make it possible to perform simple and accurate adjustment and removal, by separating a resin film provided on a thin film by a photoetching method, and thereafter removing a part of a resistance-adjusting part by a chemical etching method. CONSTITUTION:A resistor element 2 comprising a metal resistance material having a thickness of 0.1-0.5mum is formed by a photoetching method on the surface of a substrate 3 comprising the glass of a circular thin-film strain gage 1. The thin parts of resistance-adjusting patterns 4 and 5 are removed by chemical etching, and the resistance is adjusted. Namely, on 4b of a resistance-adjusting pattern 8 of the resistance element, aqueous solution 10 of ferric chloride, which is an etching liquid for resolving the metal resistance material, is sprayed or dropped by a nozzle 9, and the material is dissolved and removed.
申请公布号 JPS60114703(A) 申请公布日期 1985.06.21
申请号 JP19830223845 申请日期 1983.11.28
申请人 AISHIN SEIKI KK 发明人 ISHII MASAMI;TAKAHASHI MINORU;TSUZUKI TAKAYOSHI
分类号 H01C17/24;G01B7/16 主分类号 H01C17/24
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