| 摘要 |
<p>PURPOSE:To simplify the manufacturing processes, eliminating a process for positioning filters, by providing an a-SiGe film on a conductive film, and dividing it into tow or more detecting sections so that the two detecting sections have different composition ratios for Si and Ge. CONSTITUTION:A transparent conductive film 12, an a-SiGe 13 and electrode 14 constituting a single detecting section are formed on a glass substrate 11 successively in that order to form an optical wavelength detecting element. For this operation, a vacuum tank is provided with an electrode 3 to supply electric power for generating glow discharge 2 and with an opposing electrode 6 to heat the substrate 5 with a heater. SiH4 and GeH4 are used as material gases, for example. The SiH4 and GeH4 gases are introduced through gas introducing pipe 7 and 8, respectively, into the glow discharge 2 and discharged from an air outlet 9. When the a-SiGe is deposited in the apparatus as discribed above, the composition ratio of Si becomes larger in the left side portion of the substrate 5 and the ratio of Ge becomes larger in the right side. In the photoelectric conversion thin film thus obtained, the optically forbidden bands become wider on the left side of the substrate while narrower on the right side.</p> |
