| 摘要 |
PURPOSE:To permit variation of several photoconditions and to enable to maintain necessary film thickness and necessary dimensions of a pattern easily by measuring decrease of film thickness of exposed part of a photoresist and stopping development at the time when predetermined decrease of the film thickness is detected. CONSTITUTION:A resist film is obtd. on a silicon wafer 1 by dropping ''Photoneece'' on the silicon wafer 1, sucking the silicon wafer 1 with vacuum and fixing it on a spinner head 2, and performing soft-baking while turning it at high speed. The silicon wafer is exposed using an exposing device and developed again in a developing device. The wafer 1 is transported to the spinner head 2 and sucked with vacuum and turned at high speed. The developing liquid is discharged from a spray nozzle 3, and the development is proceeded by holding the liquid on the wafer. The decrease of the resist film thickness is measured by the observation of interference. Previously collected data are stored in a controller 8 and the change of film thickness is operated basing on the change of intensity of reflected wave accompany the decrease of the resist film thickness. Rinsing liquid is discharged from a spray nozzle 3 at the time when desired change of film thickness is detected, and the development is then stopped. |
