| 摘要 |
PURPOSE:To substantially decrease the resistance value as well as to perfectly prevent the electric short-circuit, by covering the side faces of a polycrystalline silicon film with a second metallic silicide layer of a first metal and covering the upper face thereof with a third metallic silicide layer of the second metal. CONSTITUTION:An oxide film 22, a polycrystalline Si film and a nitride film are adhered on an Si substrate 21 successively in that order and patterned to form a polycrystalline Si film 23 and a nitride film 27. After that, ions are implanted to form a diffusion layer 40. The oxide film 22 is then selectively removed to form an oxide film 22a. A first metal layer 25 is adhered on the whole surface and is subjected to heat treatment to form a first metallic silicide layers 26a and 26c and second metallic silicide layers 26b and 26d. After the non-reacted sections of the first metal layers 25a, 25b and 25c are removed, the surface is selectively subjected to thermal oxidation to form oxide films 29a, 29c, 29b and 29d. A second metal layer 28 is adhered on the whole surface and then heat treated to form a third metallic silicide layer 30, while the non-reacted sections of the second metal layer are removed. An MOS semiconductor device is thus obtained. |
