| 摘要 |
PURPOSE:To plan reduction in size of element and high speed of operation and improve reliability thereof by forming an insulating film made to remain on the side wall of a gate electrode as protruded from the surface of the gate electrode after patterning the gate electrode. CONSTITUTION:A p type layer 23 and a silicon dioxide film 24 made to be a channel stopper are sequentially formed on a field region on a p type Si substrate 21. After a polycrystalline Si film 28 (a gate electrode) is firmed, shallow diffused layers 301 and 302 are formed at the periphery of a gate region and deep diffused layers with high density 311 and 312 are formed at the position apart from the gate region, thereby obtaining an LDD construction. Hereinafter, a resist film 29 is removed to expose an Si film 28 and bring a state that a silicon dioxide film 32 is made to remain on the side wall of the Si film 28 in an upwardly protruding shape. After this, W films 331-333 are formed only on an Si film 28, a source region, and a drain region. Next, after a silicon dioxide film 34 is stacked, a contact hole is formed in mold and an Al film is deposited and processed to form wirings 351 and 352. |
