发明名称 PREPARATION OF PATTERN
摘要 PURPOSE:To perform dry etching of fine pattern with ease by coating a photosensitive silicone resin compsn. contg. specified polysiloxane and aromatic azide compd. and/or aromatic sulphonylazide compd. on a layer to be worked and using a pattern formed by exposure and development on the layer to be worked as a resist layer. CONSTITUTION:The photosensitive silicone resin compsn. to be used as a resist layer is easily obtd. by mixing polysiloxane obtd. by hydrolyzing at least one silane compd. expressed by SiX4, RSiX3, R2SiX2 or R3SiX (X is a hydrolyzable group; R is a univalent hydrocarbon group) and polycondensing the hydrolyzed product (wherein such polysiloxane obtd. by hydrolyzing RSiX3 alone and polycondensing the hydrolyzed product is excluded) and/or an aromatic sulphonylazide compd. in the presence of a suitable solvent. Preferred solvent to be used is one capable of dissolving both the polysiloxane and the photosensitive compd., such as aromatic hydrocarbon (e.g. benzene, toluene, xylene), ketonic solvent such as acetone, methyl ethyl ketone, etc.
申请公布号 JPS60114858(A) 申请公布日期 1985.06.21
申请号 JP19830222839 申请日期 1983.11.25
申请人 HITACHI KASEI KOGYO KK 发明人 UCHIMURA SHIYUNICHIROU;SATOU NINTEI;MAKINO DAISUKE
分类号 G03C5/00;G03F7/038;G03F7/075;G03F7/26;H01L21/027;H01L21/302;H01L21/3065 主分类号 G03C5/00
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