SEMICONDUCTOR DEVICE PAD AREA PROTECTION STRUCTURE

摘要

Semiconductor device structure comprising a metalization pattern (16) having a pad area (18). The structure provides protection to the pad area (18) from attack by a corrosive environment. The structure comprises a semiconductor body (10) having a first surface (12), there being a first layer (14) of dielectric material (14) covering at least a portion of the first surface (12). A metalization pattern (16) having a pad area (18) covers a portion of the first layer (14) of dielectric material (14). Access pad structure (20 (22, 40, 44)) covers the pad area (18) for providing an access pad (20) and for protecting the pad area (18) from attack by a corrosive environment. The access pad structure (20 (22, 40, 44)) comprises conductive material (40, 44) impervious to attack by the corrosive environment.