| 摘要 |
PURPOSE:To enable to avoid a conductive layer from being damaged when apertures are formed in an IC in a structure, wherein the conductive layer is coated on the surface of the semiconductor substrate, the conductive layer is covered with an insulating film and a protective film, the apertures are formed, and the conductive layer is made to expose, by a method wherein a stopper layer consisting of a material, which is strong for each etching liquid or gas for the insulating film and the protective film, is readily provided between the conductive layer and the insulating film. CONSTITUTION:A field insulating film 2 is coated on an Si substrate 1, a polycrystalline Si layer 3, which is used for a fuse, etc., is deposited thereon and cutting parts 3a for using as a fuse respectively are formed at parts, where intersect orthogonally to the longitudinal direction of the layer 3. For forming the cutting parts 3a, an SiO2 interlayer oxide film 4 and an Si3N4 film 4 are laminatedly coated on the Si layer 3, a PSG film 6 is formed on the whole surface including the layer 3 and the films 4 and 5, and an aperture 6a is bored in the PSG film 6 corresponding to the cutting parts 3a. Following that, an SiO passivation film 7 is coated on the whole surface, an aperture 7 a is again bored, and the film 5 made to expose is removed using CF4+O2 gas, and furthermore, the film 4 is also removed using mixed liquid of HF and NH4F. |
