| 摘要 |
PURPOSE:To prevent faults due to alpha-rays by a method wherein the upper part of a region with at least a functional element is coated with a glass film containing metal particles. CONSTITUTION:Memory information accumulated in a capacitor composed of an N<+> type layer 2 and a poly Si layer 4 is shielded by an alpha ray shielding from 5 from the alpha-rays emitted from radioactive elements contained in a very small amount in an aluminum film 6. The film 5 is formed by mixing nickel ultrafine powder in 60wt% of silicon resin, and then by spin coating at a revolution of 500rpm after viscosity adjustment by using a solvent. Next, the film is calcined for a prescribed time at a temperature of 250 deg.C in nitrogen, and a semiconductor substrate is coated with it over the entire surface to a thickness of 15mum. |
