| 摘要 |
PURPOSE:To obtain the titled element of high performance by a method wherein layers having different composition from each other and widths whereby the effect of secondary quantum appears are laminated in multilayer alternately on a crystal substrate, and another layer is formed in a groove section cut off from the end part where only one layer is exposed. CONSTITUTION:InGaAs crystal 52 and InP crystal 51 are grown in 100 layers and 99 layers respectively on the InP crystal substrate 50, and InP crystal 51 is grown to 1.5mum. The InGaAs crystal of the cross-section of this crystal is selectively etched, when 100 streaks of groove are formed in the cross-section of the crystal. Thereafter, InP crystal 62 and InGaAs crystal 61 are crystal-grown every one layer on this cross-section. The use of thus obtained quantum fine line for the active layer of a semiconductor layer enables a laser improved in quantum effect and temperature characteristic to be obtained, and its application to an FET produces the FET operating at high speed. |
