A semidonductor device having an interconnection structure.

摘要

Two (polycrystalline) silicon tracks (7, 8) located at a relative distance of the order of submicrons which contact the subjacent semiconductor body (1) with a pn junction formed therein, are connected to each other via a metal silicide track (21). The resulting shortcircuiting of the pn junction does not influence the operation of the circuit, for example, a memory cell, realized in the semiconductor body.

By providing beforehand the whole conductor pattern with an oxide layer (10) in which a contact hole (39) is formed at the area of the shortcircuit (21), the latter can be provided in a self-aligning manner.