Semiconductor device having an interdigital electrode configuration and its manufacture.

摘要

O A semiconductor device, (eg a gate turn-off thyristor) has at a major surface 100 of a semiconductor body 1 a plurality of electrode fingers 6, 7 alternately contacting opposite conductivity type regions 5, 4 (eg the cathode and gate) of the semiconductor body. In order to save useful semiconductor area and to allow an improved electrode geometry bonding pads 13, 14, 15 for the electrodes 6, are formed at a level above the electrodes. An insulating layer 9 separates the bonding pads and the electrodes. A first bonding pad 13 contacts a first set of electrode fingers 6 through a first set of windows 10 in the insulating layer and a second bonding pad contacts a second set of electrode fingers 7 through a second set of windows 11. in operation the voltage drop along each electrode finger of a set is substantially equal. A third bonding pad 15 may also contact the second electrode set through a third set of windows 12 in the insulating layer.