| 摘要 |
PURPOSE:To easily obtain a desired impurity concentration profile by a method wherein an epitaxial film is grown on a semiconductor substrate and then heat- treated. CONSTITUTION:N type or P type impurity ions are implanted to the required region of the semiconductor substrate 11. The epitaxial film 14 is grown on the substrate and then heat-treated, thus forming an N-well or a P-well 15. When a field oxide film 16 is formed by applying the LOCOS method using an Si nitride film, which is then removed, Si epitaxial surfaces are exposed to device-forming regions 17 and 18. After a gate oxide film 19 is formed, an insulation gate FET is completed by ion implantation to the regions 17 and 18. |
