SEMICONDUCTOR ETCHING METHOD

摘要

PURPOSE:To enhance the controllability of an etching depth and to reduce the temperature dependency by emitting an Ar ion beam to etch a semiconductor made of a GaAs region and an AlGaAs region, thereby decelerating an etching speed. CONSTITUTION:An Ar ion beam is emitted to a semiconductor made of a GaAs region and an AlGaAs region to etch the semiconductor. This etching is performed by emitting the beam to the semiconductor. In this case, the energy of the beam is 350eV or less. Thus, a dry etching using the Ar ion is executed to decelerate the etching speed and readily control the etching depth. Further, the temperature dependency of the etching speed is almost eliminated.