发明名称 PROCESSING METHOD OF SUBSTRATE SURFACE FOR INTEGRATED CIRCUIT
摘要 PURPOSE:To prevent adhesion of a minute particle in pure water to the surface of a material and make a clean substrate without etching the surface of the substrate by processing the surface of the substrate for an integrated circuit with an acid wherein the concentration does not etch the surface or with the dilute water solusion of a base. CONSTITUTION:A dilute acetic acid solusion is made by adding acetic acid in pure water and the surface of thermally oxidized SiO2 is washed with the solution, dried by a spinner and tungsten is accumulated by Low Pressure Chemical Vapor Deposition (LPCVD) method. By changing the concentration of the dilute acetic acid solution, generation of white tungsten particles, i.e., adhesion of minute particles in the water to the surface of the thermally oxidized SiO2 can be restrained. Because, minute particles in pure water adhere to the ion of such as H3O, OH, CH3COO, etc. and become a comparatively larger particle group by changing the pH of the pure water. The particle group which has the size of a certain extent can be removed with a drop of water when it is dried and generation of a tungsten cluster can be restrained.
申请公布号 JPS60113434(A) 申请公布日期 1985.06.19
申请号 JP19830219511 申请日期 1983.11.24
申请人 TOSHIBA KK 发明人 ITOU HITOSHI;MORIYA TAKAHIKO
分类号 H01L21/306;(IPC1-7):H01L21/306 主分类号 H01L21/306
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