| 摘要 |
PURPOSE:To form epitaxial growth layers of the same kind or of different kind on both sides of a substrate crystal at one growth by placing the substrate crystal spatially in a tube reactor in a manner that both sides are exposed. CONSTITUTION:The inside of a tube reactor 3 is divided into upper and lower, two chambers by a partition panel 5 and introduced gases B and C are introduced in each chamber separately. An upper surface of a substrate crystal 1 faces the upper chamber and the lower surface faces the lower chamber. Accordingly, at an actual crystal growth, an upper lamp 6 heats the upper surface of substrate crystal 1 and the introduced gas B is introduced into the upper chamber to epitaxially grow a crystal layer corresponding to the introduced gas B on the upper surface. Also, a lower lamp heater 7 heats the lower surface of substrate crystal 1 and the introduced gas C is introduced into the lower chamber thereby epitaxially growing a crystal layer corresponding to the introduced gas C on the lower surface. |
