发明名称 SUBSTRATE SUPPORTING DEVICE FOR MOLECULAR BEAM EPITAXIAL GROWTH DEVICE
摘要 PURPOSE:To obtain a titled device which is easily detachable and by which uneven distribution of temps. of a substrate can be avoided by supporting the titled substrate at the circumferential part, and providing a member for making the heating uniform between the rear surface of the substrate and a heater for heating the substrate while leaving a vacuum space between the rear surface and the member. CONSTITUTION:A discoid member 3 for making the heating uniform is provided on a substrate support 2 while leavig a clearance enough to absorb the heat fluctuation, and a C ring 1'' is inserted into a C ring groove 10'' of the substrate support 2 and a C ring 1'' into a C ring groove 10'. A ring 1 for preventing the falling of the substrate is inserted into a C ring groove 10 at the inner wall of an opening part of the substrate support 2, and a vacuum space 30 is provided between the substrate 4 and the member 3 for making the heating uniform. Since the substrate is retained by its own weight, the stress is not formed even when the substrate is heated at high temps. An uniform temp. distribution can be easily obtained in this way. As the device is simple, the handling of the substrate in the semiconductor manufacturing process is simplified, and the device can be automated.
申请公布号 JPS60112691(A) 申请公布日期 1985.06.19
申请号 JP19830217168 申请日期 1983.11.18
申请人 NICHIDEN ANELVA KK 发明人 MURAKAMI SHIYUNICHI;ISHIDA TETSUO;SAKAI SUMIO
分类号 C30B23/08;C30B23/06;H01L21/203 主分类号 C30B23/08
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