发明名称 BEAM SCANNING METHOD AND APPARATUS FOR ION IMPLANTATION
摘要 <p>Method of and apparatus for scanning a charged particle beam over a semiconductor water in a prescribed pattern. A triangular waveform,including alternating positive and negative ramp portions of constant slope and controllable time durations, is applied to a horizontal deflection system and produces horizontal scanning of the beam. The time durations of the ramp portions determine the length of the horizontal scan lines and are controlled according to a predetermined sequence so as to provide the prescribed pattern. The triangular waveform is provided by an integrator which receives a square wave from a frequency source of controllable frequency. The predetermined sequence is stored in a read only memory which controls the frequency of the frequency source. At the completion of each ramp portion, a voltage applied to a vertical deflection system is incremented so as to step the beam vertically up or down,</p>
申请公布号 CA1189198(A) 申请公布日期 1985.06.18
申请号 CA19830421799 申请日期 1983.02.17
申请人 VARIAN ASSOCIATES, INC. 发明人 ROBERTSON, DAVID A.;TURNER, NORMAN L.
分类号 H01J37/302;H01J37/317;H01L21/265;(IPC1-7):H01J37/302 主分类号 H01J37/302
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