发明名称 |
BEAM SCANNING METHOD AND APPARATUS FOR ION IMPLANTATION |
摘要 |
<p>Method of and apparatus for scanning a charged particle beam over a semiconductor water in a prescribed pattern. A triangular waveform,including alternating positive and negative ramp portions of constant slope and controllable time durations, is applied to a horizontal deflection system and produces horizontal scanning of the beam. The time durations of the ramp portions determine the length of the horizontal scan lines and are controlled according to a predetermined sequence so as to provide the prescribed pattern. The triangular waveform is provided by an integrator which receives a square wave from a frequency source of controllable frequency. The predetermined sequence is stored in a read only memory which controls the frequency of the frequency source. At the completion of each ramp portion, a voltage applied to a vertical deflection system is incremented so as to step the beam vertically up or down,</p> |
申请公布号 |
CA1189198(A) |
申请公布日期 |
1985.06.18 |
申请号 |
CA19830421799 |
申请日期 |
1983.02.17 |
申请人 |
VARIAN ASSOCIATES, INC. |
发明人 |
ROBERTSON, DAVID A.;TURNER, NORMAN L. |
分类号 |
H01J37/302;H01J37/317;H01L21/265;(IPC1-7):H01J37/302 |
主分类号 |
H01J37/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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