HIGH REPETITION RATE, UNIFORM VOLUME TRANSVERSE ELECTRIC DISCHARGE LASER WITH PULSE TRIGGERED MULTI- ARC CHANNEL SWITCHING

摘要

A high power excimer laser emits a pulsed output at a high repetition rate in the ultraviolet wavelength region and a uniform power output across the laser beam. By subjecting doped silicon wafers to the pulsed laser output, epitaxial regrowth of silicon crystals can be induced to repair damage to the silicon crystal structure which normally occurs during implantation of the dopant materials.