发明名称 MOS Power amplifier circuit
摘要 A MOS power amplifier circuit comprised of a load driver including two p-channel MOSFETs connected in series, a preamplifier for amplifying an analog input signal and supplying the amplified one to the gate of one of the MOSFETs and for rendering the impedance of the two MOSFETs low; and an inverting amplifier for invert-amplifying the output signal from the preamplifier and supplying the amplified one to the gate of the other MOSFET. The operating voltage of the preamplifier and the inverting amplifier is higher than that of the load driver.
申请公布号 US4524328(A) 申请公布日期 1985.06.18
申请号 US19830524783 申请日期 1983.08.19
申请人 TOKYO SHIBAURA DENKI KABUSHIKI KAISHA 发明人 ABOU, SHOUJI;SASAKI, ITSUO
分类号 H03F3/20;H03F3/213;H03F3/30;H03F3/45;(IPC1-7):H03F3/45;H03F3/26 主分类号 H03F3/20
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