发明名称 |
Device for detecting infrared rays |
摘要 |
A device for detecting infrared rays and a method for manufacturing the same having an improved sensitivity in the infrared range. A first region of a second conductivity type is formed on a substrate of a first conductivity type by diffusion or ion-implantation. Second and third regions of the same conductivity type as the substrate are formed in the first region and the substrate by diffusion or ion-implantation. A metal such as platinum, gold or palladium is evaporated onto an exposed part of the first region by sputtering. The metal layer thus deposited is annealed to form a Schottky contact.
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申请公布号 |
US4524374(A) |
申请公布日期 |
1985.06.18 |
申请号 |
US19810285243 |
申请日期 |
1981.07.20 |
申请人 |
MITSUBISHI DENKI K.K. |
发明人 |
DENDA, MASAHIKO;TSUBOUCHI, NATSURO |
分类号 |
H01L31/108;(IPC1-7):H01L27/14 |
主分类号 |
H01L31/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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