| 摘要 |
PURPOSE:To form the sample processing device with which an excellent processing can be stably performed by a method wherein the density distribution of the gas discharged from a gas introducing part is made uniform by providing a gas- flow scattering body in front of a gas jetting hole. CONSTITUTION:Silane gas 4, phosphine gas 5 which is doping gas, and diborane gas 6 are introduced into the chamber 3 which is decompressed by the exhaust system consisting of a mechanical booster pump 1 and a rotary pump 2 by a massflow controller 7 through a gas introducing part 8. Said gas introducing part is formed in ring shape, and a stainless steel mesh 19 is wound around the ring-shaped gas introducing part 8. As a result, jetted gas is scattered, and the facial distribution of gas concentration on a sample stand can be made uniform. A hydrogenated amorphous silicon (a-Si:H) film having a uniform film thickness is formed on the substrate 9. |
