| 摘要 |
PURPOSE:To prevent the surplus outward diffusion of a phosphorus component on heating processing, and to prevent the breakdown of a semiconductor device by forming an insulating layer for insulating a wiring conductor layer in constitution in which low-concentration PSG is placed on high-concentration PSG. CONSTITUTION:PSG 17 in high concentration is placed on a source region 15, a drain region 16 and polysilicon 14 between both regions, PSG 18 in low concentration is placed on the PSG 17, and the PSG 18, 17 in low concentration and high concentration is patterned to shape contact holes 22-24. Acute PSG sections in the vicinity of the edge sections of the contact holes 22-24 are melted by heat and rounded through heating under the state, and aluminum is applied from the upper sections of the contact holes and patterned, thus forming wiring conductor layers 19-21. |
