| 摘要 |
PURPOSE:To form a through hole small in opening diameter through a comparatively thick org. polymer film by using a chemical etching mask having a 2-layer structure of an inorg. film and a photoresist. CONSTITUTION:An org. polymer film 2, an inorg. film 5, and a photoresist 3 are succussively laminated on a substrate 1, a desired pattern is formed, the inorg. film 5 is etched off, further, and the polymer film 2 is also etched off to form a through hole 4. As the inorg. film 5, a single layer film made of one of Ti, Cr, Al, Mo, etc., a multilayer film formed by combining some of them, further, a single layer film made of one of SiO2, Si3N4, Al2O3, etc., and a multilayer made of combination of some of them. A small through hole 4 can be formed by etching the org. polymer film. |
