发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To increase strength, reduce electrical resistance, and enhance stability of connections between wirings by a method wherein an upper layer wiring is connected to a part of the upper surface and of the side of a lower-layer wiring. CONSTITUTION:A lower-layer wiring 1 is provided on an insulating film 5 covering a substrate 6 and then an inter-wiring insulating film 4 is formed. A contact hole 3 is provided in the inter-wiring insulating film 4 for the connection of an upper-layer wiring 2 and the lower-layer wiring 1. The contact hole 3 is wider than the lower-layer wiring 1 so that the side and the upper surface of the lower-layer wiring 1 are partially exposed. A process follows wherein an upper-layer wiring 2 is formed by such an ordinary method as vapor depositing or sputtering. In such a device, the upper-layer wiring 2 is connected through the contact hole 3 with two sides of the lower-layer wiring 1 in a single primary plane, whereby both the contact area and the connecting strength are increased and the electrical resistance at the connection is decreased. The ridge line formed between the sides of the lower-layer wiring 1 and the primary plane serves as the nucleus whereabout wiring material collects in a process wherein the upper-layer wiring 2 is built by vapor depositing or sputtering, and the result is a strong connection formed along the ridge line.
申请公布号 JPS60111442(A) 申请公布日期 1985.06.17
申请号 JP19830219957 申请日期 1983.11.22
申请人 NIPPON DENKI KK 发明人 KOJIMA HIDETO
分类号 H01L23/522;H01L21/768;(IPC1-7):H01L21/88 主分类号 H01L23/522
代理机构 代理人
主权项
地址