| 摘要 |
PURPOSE:To improve the reliability of minute wiring resultant from increasing the density of element integration while preventing the step disconnection of any wiring layer later formed by a method wherein, when a metallic film is selectively grown in a contact hole formed in an insulating film, any needless metallic crystalline particles coated on the insulating film are removed by means of lift off process. CONSTITUTION:A gate electrode is formed by means of etching a phosphorus added polycrystalline silicon film 25 formed on a gate oxide film 24 on a P type silicon substrate 21. Later an N<+> diffusion layers 261, 262 to be source.drain are formed by means of arsenic implanting process and then a silicon oxide film 27 is formed as an insulating film. Furthermore, contact holes 291, 292 are formed by means of etching process utilizing a resist film 28. Later, tungsten films 301, 302 utilizing WF/H2 leaving the resist film 28. When the resist film 28 is removed, W crystalline particles 303, 304 locally grown on the film 28 are also removed. Finally an aluminium film is evaporated as a wiring material to form the source.drain wiring layers 311, 312 and other layers. |
