| 摘要 |
PURPOSE:To facilitate manufacture, and to improve reliability by constituting one of driving-transistors in three dimensions within a range in which it is not superposed to an impurity diffusion region in another semiconductor element formed in a semiconductor substrate. CONSTITUTION:A memory-cell is formed by transfer-gate-transistors (TR)Q3 and Q4 using the crossing sections of a first layer poly Si layer 3 each crossing n<+> layers 1a, 1b and n<+> layers 2a, 2b at right angles as gate electrodes, one driving-TRQ1 using the crossing section of a first layer poly Si layer 5' each crossing n<+> layers 1b and 1c at right angles as a gate electrode, another one driving- TRQ2 using the crossing section of a second layer poly Si layer 7a each crossing two n<+> layers 4'a and 4'b formed to the extending section of the first layer poly Si layer 5' at right angles as a gate electrode, and load resistors R1 and R2 shaped in second layer poly Si layers 7a and 7b. Each of circuit elements among the circuit elements and among digit lines D and -D and a grounding potential line is connected through an ohmic contact section and a poly Si layer. |
