| 摘要 |
PURPOSE:To increase capacity to improve voltage-withstanding and leak characteristics of a device by a method wherein a metal silicide layer is formed on a semiconductor substrate, the layer is subjected to oxidation, and electrodes are built in the layer of oxide. CONSTITUTION:A metal silicide layer, such as a TaSix layer 12, is formed on an Si substrate 11 with its surface crystal orientation of (100) by means of sputtering. The composition of the TaSix layer 12 is adjustable during the sputtering process. The TaSix layer 12 is then subjected to oxidation at 1,000 deg.C. A change indicated by 2TaSix+yO2=Ta2O5+zSiO2 takes place and an SiO2 layer 13 and a Ta2O5 layer 14 are formed on the substrate 11. A process follows wherein a polycrystalline Si layer is vapor-deposited, doped with Al or a P type impurity, on the Ta2O5 layer 14. A patterning is performed and an electrode 15 is built. In a device constructed as such, the quality is improved of the film along the interface of the substrate 11 and the device is provided with better leak and voltage-withstanding characteristics. |
