| 摘要 |
PURPOSE:To obtain a composite semiconductor device protected from overcurrent without using an exclusive resistor or CT or the like by constituting the device that an input signal is applied surely to each gate of two MOSFETs. CONSTITUTION:When a positive input signal is applied to a control input terminal G-S, an MOSFET2 is turned on at first and then an MOSFET1 is turned on. Then a positive gate current is fed to a gate G of a GTO, which is turned on. Then an anode current iA (identical value to drain current iD of the MOSFET2) is increased gradually and reaches a predetermined reference value value IREF. Since the MOSFET2 has a resistance characteristic at turning-on, the ON-voltage VD-S of the FET2 is increased in proportion to the drain current iD of the FET2. Thus, the semiconductor device is protected from destruction because of an overcurrent. |
