| 摘要 |
PURPOSE:To obtain a solid image sensor device characterized by a broad dynamic range and a minute structure, without decreasing an optical vignetting factor, by providing a capacitor means, which is formed in a groove that is formed in a substrate in correspondence with a light sensitive region, is connected to the light sensitive region, and stores part of photoelectric charge. CONSTITUTION:In one main surface of a P-type silicon substrate 12, and N<+> region, which is formed by the diffusion of N-type impurities, is included. A P-N junction is formed between the region and the P-type material of the substrate 12. Part of photoelectric charge, which is excited by incident light in a light receiving sensitive region 10, is stored in said junction region. On the surface of the substrate between the neighboring N<+> diffused regions 10, a gate electrode layer 14 comprising polycrystalline silicon in stripe shape is arranged in the direction of a row. The layer 14 is advantageously formed by an ordinary LOCOS. In the direction of a column, a stripe shaped metal electrode layer, e.g., an aluminum layer 16, is arranged. Each N<+> diffused region 10 is extended before the polycrystalline silicon layer 14. The source region of an IGFET is formed up to this part. |
