| 摘要 |
PURPOSE:To obtain a lateral transistor which has a large current amplification factor with a large current by providing an emitter region formed insularly on the surface of a semiconductor layer and collector regions formed insularly in four directions of the emitter region. CONSTITUTION:Emitter electrode wirings 5 and collector electrode wirings 6 are connected so that four regions of four directions of an emitter region 1 become collector regions 2. The region between the region to become the emitter and the regions to become the collectors is an N type epitaxial region to become a base region, and its interval is the width of the base. Since the same shapes are aligned at an equal interval, the area efficiency is remarkably improved, and the elongation of the current can be improved without increasing any manufacturing step. |
