| 摘要 |
PURPOSE:To prevent the variation in the resistance value of a high resistance polycrystalline silicon layer as a resistor by removing at least the portion on the high resistance polycrystalline silicon layer of a silicon nitride film as a protecting film or an interlayer insulating film. CONSTITUTION:A P type silicon substrate 1, N<+> type source, drain regions 2, 2', a channel stopper region 3, a field oxide silicon film 4, gate electrodes 5, 5' form an N channel MOS transistors A, B. A flip-flop formed by using polycrystalline silicon layer 8 as a resistor form 1 bit. An interlayer insulating film 10 and aluminum wirings 11 are coated, and a PSG film 12 and a silicon nitride film 13 are used as protective films. However, the silicon nitride film of the portion of the polycrystalline silicon layer 8 is removed. Thus, the layer 8 as a resistor is not affected by the adverse influence of the film 13. |
