发明名称 METHOD FOR MICROWAVE PLASMA TREATMENT
摘要 PURPOSE:To uniform the uneven plasma density corresponding to the treated surface of a substrate by causing the treated surface of substrate to reciprocate in the direction of passage of a plasma and in the contrary direction. CONSTITUTION:A reciprocation device 80 is arranged below a vacuum container 21 and the reciprocation shaft 81 of the reciprocation device 80 projects in a space 90 formed by the vacuum container 21 and a discharge tube 30 in a manner it is capable of reciprocation in parallel to a shaft axis of the discharge tube 30 with keeping an air-tight state. A susceptor 100 is provided at the upper end of the reciprocation shaft 81. The plasma density distribution which is enclosed in the discharge tube 30 by an electric field changes with ranging from the distribution in which a plasma density A becomes maximum in the center of the discharge tube 30 and it becomes smaller as a distance R in a radius direction of the discharge tube 30 becomes larger and the distribution in which the plasma density A becomes maximum in a certain position of the distance R of a radius direction of the discharge tube 30, according to the position in a direction of a shaft axis of the discharge tube of the substrate 110 put on the susceptor 100. Accordingly, the reciprocation of the substrate in a direction of plasma passage and in the contrary direction makes it possible to uniform the uneven plasma density corresponding to the treated surface of substrate.
申请公布号 JPS60109232(A) 申请公布日期 1985.06.14
申请号 JP19830216136 申请日期 1983.11.18
申请人 HITACHI SEISAKUSHO KK 发明人 YAMAMOTO NORIAKI;SHIBATA FUMIO;TSUBONE TSUNEHIKO;KANEKO YUTAKA
分类号 H01L21/302;H01L21/3065;(IPC1-7):H01L21/302 主分类号 H01L21/302
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