| 摘要 |
PURPOSE:To increase the uniformity of an etching rate of treated matters in a treatment container by constituting the treatment container so that it comprises a pair of high frequency electrodes arranged with facing each other on the periphery of the container and the high frequency electrode is divided into at least three from its center toward both ends and the high frequency electric powers applied to the divided electrodes can be adjusted separately. CONSTITUTION:The substrate table 19 on which semiconductor substrates 20 are put in the predetermined intervals is contained in a treatment container 11. After the air in the treatment container 11 closed air-tightly by a cap 18 is exhausted by an exhaust pipe 13, oxygen gas is introduced from a gas introducing pipe 12 to make the vacuum degree 0.8-1.5Torr. Next, high frequency electric power is applied to three-divided high frequency electrodes respectively to make the oxygen gas a plasma and resist films on the substrates 20 are removed by etching using the plasma gas. In this case, the high frequency electric powers are so adjusted for application by adjusting devices 17-1, 17-2 and 17-3 that the electric field density produced in the treatment container by the high frequency electric power applied to the central electrodes 14-1 and 15-1 is about 50% higher than that by one applied to the both-end electrodes 14-2, 14-3, 15-2 and 15-3. |
