| 摘要 |
PURPOSE:To contrive speed-up by carrier passage to a crystallized film having a larger mobility of carriers by a method wherein the crystallized semiconductor film and an amorphous semiconductor film are put in a double-layer. CONSTITUTION:The crystallized Si film 12 resulting from laser anneal polycrystallization or single-crystallization of the amorphous Si film formed by plasma CVD is formed on the surface of a glass substrate 11, and the amorphous Si film 13 is formed thereon by plasma CVD, which are put in a structure of double-layer semiconductor films. Thus, a deep depletion type MOSFET consisting of diffused layers 14 and 15, a gate oxide film 16, and a gate electrode 17 formed thereon is obtained. |
