| 摘要 |
PURPOSE:To enable the large decrease in defect of an insulation film obtained at the final step by a method wherein an insulation film formed on a semiconductor substrate is heat-treated by implanting ions in a specific amount or more, and a conductive layer is formed thereon. CONSTITUTION:On the P type semiconductor substrate 21 made of an Si crystal having a surface orientation of (100) and a specific resistance of 0.02OMEGAcm, the insulation film 22 made of Si oxide is formed to a thickness of 300Angstrom by the treatment of thermal oxidation e.g. in a dry oxygen atmosphere having a temperature of 950 deg.C. Next, ions 23 are implanted to the insulation film at an energy of 100KeV. Then, the heat treatment to the insulation film is carried out for 10min in a nitrogen atmosphere having a temperature of 1,000 deg.C, resulting in the formation of a conductive layer 24 into a required pattern. In this manufacture, if the quantity of ion implantation to the insulation film is over 1X10<14>pcs/ cm<2>, with this value as the limitation, the defect contained by the insulation film largely decreases from a value of 12pcs/cm<2> that can be negligible in practical use. |
