| 摘要 |
PURPOSE:To obtain an oxide film having uniform film thickness with excellent reproducibility by heating a semiconductor substrate in an oxidizing atmosphere gas containing a very small amount of water content in quantity more than maximum water content discharged from an oxidizing atmosphere system and less than 1,000ppm when the oxide film is formed on the surface of the substrate. CONSTITUTION:A quartz jig 3 on which a large number of Si substrates 1 are erected at intervals is received in a quartz pipe 2 surrounded by a heating furnace 12, oxygen to which a very small amount of water content is added is flowed into the quartz pipe 2 and the substrates 1 are heated at approximately 1,000 deg.C, and SiO2 films are formed on the surfaces of the substrates. In the constitution, a purifier 4 for oxygen is disposed outside the quartz pipe 2, oxygen from the purifier is bubbled in a quartz vessel 6 receiving pure water 7 fitted in a thermostatic chamber 5, and water content is regulated by a water content densitometer while a very small amount of water content is made to be contained in oxygen and oxygen is flowed into the quartz pipe 2. Water content is regulated in quantity more than maximum water content discharged from the quartz pipe 2 and less than 1,000ppm. |
