| 摘要 |
PURPOSE:To obtain the highly integrated FET which can be operated at a high speed by a method wherein a gate electrode is constituted by cut-in-two semicylindrical metals opposing each other leaving a space between them, the outer circumference of said metals are surrounded by a gate insulating film, a semiconductor layer is formed between said metals and on both sides of them, and a source region and a drain region are provided on both sides of the semiconductor layer using the semiconductor layer located between the cut-in-two semicylindrical metals as a channel region. CONSTITUTION:The first stage recess and the second stage recess located in the center of a first stage recess are formed on the surface layer part of an Si substrate 1, and a semicylindrical gate electrode 15 consisting of the Mo-silicide surrounded by a gate insulating film 16 is buried in a second stage recess in such a manner that half of the gate electrode 15 will be protruded on the surface side. Then, a semiconductor layer 11 is buried in the first stage recess through an insulating film, the surface is flattened, and a semicylindrical gate electrode 13 formed in the same manner as the electrode 15 is formed on the above-mentioned surface opposing to the electrode 15. Through these procedures, a source region 17 and a drain region 18 are provided on both sides of the layer 11 using the layer 11 located between the opposing electrodes 13 and 15. |
