| 摘要 |
PURPOSE:In the titled device, to pull up beltlike silicon crystal stably in high accuracy with controlling its width without requiring a complicated device, by providing a slit of capillary die with part having increased width. CONSTITUTION:The capillary dies 3 (31 and 32) are set in the silicon melt 1 in the quartz crucible 2, seed crystal (not shown in the figure) is brought into contact with the melt 1 which is rising in the slit 301 of the dies 3, and it is pulled up under given temperature and pulling rate conditions to form the beltlike crystal 4. The dies 3 (31 and 32) in the device are equipped with the parts 6 (61 and 62) having increased thickness at given distances from both the ends in the longer direction, respectively, force proportional to surface tension to the grown crystal at the parts is increased, and crystal width at the parts is regulated. |
